NPN transistor
Ebers–Moll NPN bipolar transistor.
- electrical
- Modelica Standard Library
- 3 ports
- 1 parameter
npnLibrarySemiconductorsDescription
An NPN bipolar transistor using the Ebers–Moll model with the Early effect, transit-time charge, and junction capacitances.
Example
Transistor switches A CMOS inverter of an NMOS and a PMOS transistor, and NPN and PNP transistors switching loads.
InputGround (Input)VDD 5 VGround (VDD 5 V)PMOSNMOSGround (NMOS)Inverter outGround (out)Input, NPNGround (Input, NPN)VCC 5 VGround (VCC 5 V)R C 1 kΩR B 10 kΩNPNGround (NPN)CollectorGround (collector)Input, PNPGround (Input, PNP)VCC 5 V, PNPGround (VCC 5 V, PNP)R B 10 kΩ (PNP)PNPLoad 1 kΩGround (PNP load)Load voltageGround (load voltage)
Also in this example:DC voltageVoltage sensorGroundResistorPulse voltageNMOS transistorPMOS transistorPNP transistor
Ports
Conserving terminals 3
-
C
Collector.
-
B
Base.
-
E
Emitter. Carries the sum of collector and base currents, less the substrate current.
Parameters
-
Forward beta
Bf50≥ 0
Forward current gain β. Positive.
Equations
Modelica
vbe = B.v − E.v, vbc = B.v − C.v ibe = Is · (exp(vbe / Vt) − 1) + Gbe · vbe, ibc = Is · (exp(vbc / Vt) − 1) + Gbc · vbc C.i = (ibe − ibc) · (1 − Vak · vbc) − ibc / Br − cbc · d(vbc)/dt − iS B.i = ibe / Bf + ibc / Br + cbc · d(vbc)/dt + cbe · d(vbe)/dt iS = −Ccs · d(C.v)/dt Fixed: Br = 0.1, Is = 0.1 fA, Vt = 25.85 mV, Vak = 0.02 1/V, Tauf = 0.12 ns, Taur = 5 ns, Cje = 0.4 pF, Cjc = 0.5 pF, Ccs = 1 pF, Gbe = Gbc = 1 fS
Implementation
Modelica Standard Library 4.1.0
MSL documentation Modelica.Electrical.Analog.Semiconductors.NPNAssumptions and limitations
- Only Bf is adjustable. No base, collector, or emitter series resistance, and no temperature dependence.
- The substrate is implicitly grounded: Ccs connects the collector to ground.
- The exponentials continue linearly above 40 · Vt (about 1 V).
See also
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